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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
SOT 23
S9011LT1
FEATURES
TRANSISTORNPN (c)
1. BASE 2. EMITTER 3. COLLECTOR
Power dissipation PCM : 0.2 W Tamb=25ae(c) Collector current ICM : 0.03 A Collector-base voltage V(BR)CBO : 30 V Operating and storage junction temperature range T J T stg: -55aeto +150
Unit : mm
ELECTRICAL CHARACTERISTICS Tamb=25ae
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) VCE(sat) VBE(sat)
unless
Test
otherwise
specified(c)
MIN 30 20 4 0.1 0.1 0.1 70 200 0.3 1 V V TYP MAX UNIT V V V |I A |I A |I A
conditions
Ic= 100|I AIE=0 Ic= 0.1mAIB=0 IE=100|I AIC=0 VCB=16 V , IE=0 VCE=16V , IB=0 VEB= 3.5V , IC=0
VCE=5V, IC= 1mA IC=10 mA, IB= 1mA IC=10 mA, IB= 1mA VCE=5V, I = 1mA C
Transition frequency
fT f=30MHz
150
MHz
DEVICE MARKING:
S9011LT1= 1T
SOT-23 PACKAGE OUTLINE DIMENSIONS
D b
|E
0.2
E1
E
L1 e e1 C A1 A2 Symbol A A1 A2 b c D E E1 e e1 L L1 |E 0.300 0 1.800 0.550REF 0.500 8 0.012 0 Dimensions In Millimeters Min 0.900 0.000 0.900 0.300 0.080 2.800 1.200 2.250 0.950TPY 2.000 0.071 0.022REF 0.020 8 Max 1.100 0.100 1.000 0.500 0.150 3.000 1.400 2.550 Min 0.035 0.000 0.035 0.012 0.003 0.110 0.047 0.089 0.037TPY 0.079 A L Dimensions In Inches Max 0.043 0.004 0.039 0.020 0.006 0.118 0.055 0.100

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